收藏本站
NTD4813N
Power MOSFET
30 V, 40 A, Single N--Channel, DPAK/IPAK
Features
?
Low R DS(on) to Minimize Conduction Losses
?
?
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
http://onsemi.com
? These are Pb--Free Devices
Applications
? CPU Power Delivery
? DC--DC Converters
? High Side Switching
V (BR)DSS
30 V
R DS(ON) MAX
13 m Ω @ 10 V
24 m Ω @ 4.5 V
D
I D MAX
40 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain--to--Source Voltage
Gate--to--Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
G
Continuous Drain
Current R θ JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
9.0
7.0
A
S
N--CHANNEL MOSFET
2 3
3
3
Power Dissipation
R θ JA (Note 1)
Continuous Drain
Current R θ JA
(Note 2)
Power Dissipation
R θ JA (Note 2)
Continuous Drain
Current R θ JC
(Note 1)
Power Dissipation
R θ JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
P D
ID
P D
I D
P D
I DM
1.94
7.6
5.9
1.27
40
31
35.3
90
W
A
W
A
W
A
1 2 1
4 4
4
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Current Limited by Package
Operating Junction and Storage
Temperature
T A = 25 ° C
I DmaxPkg
T J ,
T STG
35
--55 to
+175
A
° C
4
Drain
4
Drain
4
Drain
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
29
6
A
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain--to--Source Avalanche EAS 72 mJ
Energy (V DD = 24 V, V GS = 10 V,
I L = 12 A pk , L = 1.0 mH, R G = 25 Ω )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Y = Year
WW = Work Week
4813N = Device Code
Gate Drain Source
G
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 6
1
Publication Order Number:
NTD4813N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD4813NHT4G MOSFET N-CH 30V 40A DPAK
NTD4815NHT4G MOSFET N-CH 30V 35A DPAK
NTD4815NT4G MOSFET N-CH 30V 6.9A DPAK
NTD4854NT4G MOSFET N-CH 25V 15.7A DPAK
NTD4855NT4G MOSFET N-CH 25V 14A DPAK
NTD4856NT4G MOSFET N-CH 25V 13.3A DPAK
NTD4857NT4G MOSFET N-CH 25V 12A DPAK
NTD4860NT4G MOSFET N-CH 25V 10.4A DPAK
相关代理商/技术参数
NTD4813NH 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK
NTD4813NH-1G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NH-35G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NHT4G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NT4G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4815N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK
NTD4815N-1G 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4815N-35G 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube